2N7002KW 115ma , 60v, r ds(on) 4 ? n-ch small signal mosfet with esd protection elektronische bauelemente 31-mar-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. so t -323 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? r ds(on) , v gs @10v, i ds @500ma=3 ? ? r ds(on) , v gs @4.5v, i ds @200ma=4 ? ? advanced trench process technology ? high density cell design for ultra low on-resistance ? very low leakage current in off condition ? specially designed for battery operated systems, solid-state relays drivers relays, displays, lamps, solenoids, memories, etc. ? esd protected 2kv hbm ? in compliance with eu rohs 2002/95/ec directives mechanical data ? case: sot-323 package ? terminals: solderable per mil-std-750, method 2026 marking k72 package information package mpq leadersize sot-323 3k 7? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current i d 115 ma pulsed drain current 1 i dm 800 ma maximum power dissipation t a =25 c p d 200 mw t a =75 c 120 thermal resistance junction-ambient (pcb mounted) 2 r ? c / w operating junction and storage temperature t j , t stg -55~150 c notes: 1. maximum dc current limited by the package. 2. surface mounted on fr4 board, t < 5sec. ? ? gate ? ? source drain ?? ref. millimete r ref. millimete r min. max. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40
2N7002KW 115ma , 60v, r ds(on) 4 ? n-ch small signal mosfet with esd protection elektronische bauelemente 31-mar-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. n-channel electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. 2 max. unit test conditions static drain-source breakdown voltage bv dss 60 - - v v gs =0, i d =10 a gate-threshold voltage v gs(th) 1 - 2.5 v ds = v gs , i d =250 a drain-source on-resistance r ds(on) - - 4 ? v gs =4.5v, i d =200ma - - 3 v gs =10v, i d =500ma zero gate voltage drain current i dss - - 1 a v ds =60v, v gs =0 gate-body leakage current i gss - - 10 a v ds =0, v gs = 20v forward transconductance g fs 100 - - ms v ds =15v, i d =250ma dynamic total gate charge q g - - 0.8 nc v ds =15v, v gs =4.5v, i d =200ma turn-on time t (on) - - 20 ns v dd =30v, r l =150 ? , i d =200ma, v gen =10v, r g =10 ? turn-off time t (off - - 40 input capacitance c iss - - 35 pf v ds =25v, v gs =0v, f=1mhz output capacitance c oss - - 10 reverse transfer capacitance c rss - - 5 source-drain diode diode forward voltage v sd - 0.82 1.3 v i s =200ma, v gs =0v continuous diode forward current i s - - 115 ma pulse diode forward current i sm - - 800 ma
2N7002KW 115ma , 60v, r ds(on) 4 ? n-ch small signal mosfet with esd protection elektronische bauelemente 31-mar-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve fig.1 \ ouput ? characteristic ? fig.2 \ transfer ? characteristic fig.3 \ on ? resistance ? vs ? drain ? current ? fig.5 \ on ? resistance ? vs ? junction ? temperature fig.4 \ on ? resistance ? vs ? gate ? to ? source ? voltage
2N7002KW 115ma , 60v, r ds(on) 4 ? n-ch small signal mosfet with esd protection elektronische bauelemente 31-mar-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve fig.6 \ gate ? charge ? waveform ? fig.10 \ source \ drain ? diode ? forward ? voltage fig.9 \ breakdown ? voltage ? vs ? junction ? temperature fig.8 \ threshold ? voltage ? vs ? temperature fig.7 \ gate ? charge ?
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